A Charge-Controlled Model for MOS Transistors

Maher, 1989

Category: EE

Overall Rating

0.6/5 (4/35 pts)

This thesis provides a physically-motivated, charge-controlled model for MOS transistors, notable for its continuous expressions across operating regimes and the use of natural units for its time.
However, the specific physical approximations and empirical parameter extraction methods are based on device physics relevant to the micron-scale technology of 1989.
which are no longer dominant at modern deep-submicron nodes where quantum effects and other complex phenomena prevail.
Consequently, the model's technical core is obsolete and does not offer a unique, actionable path for modeling contemporary devices.

This thesis presents a physically-based, charge-controlled model for MOS transistors, emphasizing continuity across all operating regions (subthreshold, ohmic, saturation).
The combination of a charge-controlled perspective, continuous, analytic expressions across operating regimes, and the use of natural units offers a powerful framework ripe for repurposing.
A physically-based, charge-controlled model framework like the one presented... could provide a more intuitive, accurate, and computationally efficient basis for modeling large arrays of these emerging or analog devices.
Adapting this thesis's approach could lead to new, physically-grounded models for these devices that are continuous, conserve charge, and reveal the interplay of different transport mechanisms.

The most significant factor is the sheer scale of technological advancement since 1989.
This thesis's physical model, built upon assumptions valid for micron/sub-micron geometry of the late 1980s... is fundamentally ill-equipped to capture these dominant modern phenomena.
The fact that this model did not become a standard, widely adopted industry model... suggests inherent limitations or insufficient competitive advantage.
Any value offered by this model in 1989 has been comprehensively superseded.

Ignore